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CMP Users Group - Proceedings
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June, 2006
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Direct-Polish STI CMP Process For Next Generation Gap Fill Technologies
G. Prabhu, Applied Materials
Modeling Layout Dependant Within die Non-uniformity In High Selectivity STI CMP
Jihong Choi, University of California at Berkeley
Removal Rate Controlled Ceria Slurries for Low Defectivity and High Planarity in DSTI CMP
James Shen, Cabot Microelectronics Corp.
The Next Generation of Direct STI slurry, Lower COO, Improved Process Window, Reduced Defects, and Improved Stability
Jim Rothenberger, DuPont Company
Tunable Polysilicon Polishing Slurry Platforms
James Shen, Cabot Microelectronics Corp.
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