12:00-12:30pm John Borland, JOB Technologies
"P, Sb and Sn Ion Implantation with Laser Melt-Liquid Phase Crystallization for n+ Ultra Shallow Junctions in Ge"
12:30-1:00pm Jim McWhirter, Ultratech
"Process Uniformity Improvements for LSA Millisecond Annealing in the FinFET Era"
1:00-1:30pm Dean Turnbaugh, Ion Beam Services
"Recent developments with PULSION® PIII tool"
1:30-2:00pm Dick James, Chipworks
"Leading Edge Silicon Devices"
2:00-2:30pm Ice Cream and Conversation Break
2:30-3:00pm James Huang, Amtech
"Doping Technology Options for High Efficiency c-Si Solar Cells"
3:00-3:30pm Scott Prengle, SCREEN
"Formation of n+/p Junctions less than 20 nm Deep in Ge and Diffusion Control by Flash Lamp Annealing (FLA)"
3:30-4:00pm Abhijeet Joshi, Active Layer Parametrics
"Total Electrical Characterization for High Mobility Materials"
All presentations will be requested to be posted on the JTG Proceedings webpage.
If you would like to sponsor the JTG July Meeting at SEMICON West, please contact Michael Current, email@example.com