YOU MUST REGISTER FOR SEMICON WEST TO ATTEND THE JTG MEETING
Topic: Ion Implantation and Annealing: New Process and Products
Meeting Date: July 11, 2013
Time: 12:00 - 4:00 pm
Moscone Center, Room 125
(east side of the underground corridor between the North and South Halls)
Michael Current, firstname.lastname@example.org
John Borland, email@example.com
12:00-12:25 pm: Michael Current of Current Scientific: "Microwave and RTA annealing of Phos-doped, strained Si(100) and (110) implanted with molecular carbon ions"
12:25-12:50 pm: Jeff Gelpey of Centrotherm: "Low temperature oxidation & nitridation process enabling advanced junctions".
12:50-1:15 pm: Jeff Hebb of Ultratech: "Laser spike anneals for finFETs".
1:15-1:40 pm: Gary Mount of EAG: "Junction evaluation using Electron Beam-Induced Current (EBIC)".
1:40-2:00 pm: Ice cream break and networking
2:00-2:25 pm: Walt Johnson of KLA-Tencor: "Measuring high impedance implants with 4PPs".
2:25-2:50 pm: John Borland of J.O.B. Technologies: "High mobility Ge channel formation by selective liquid phase epitaxy (LPE) using Ge + B plasma implantation & laser melt annealing".
2:50-3:15 pm: Yoshiki Nakashima of Nissin: "Damage control with cluster ions and heated implantation".
3:15-3:40 pm: Mitch Taylor representing Cameca: "Advanced metrologies for advanced devices and materials: SIMS, LEXES, ATP"
3:40-4:00 pm: Dick James of Chipworks: "Leading Edge Si devices: an update"
All presentations are requested to be posted on the JTG Proceedings webpage.