1:00-1:10 Welcome & Introduction
1:10-1:35 The Convergence of 450mm, 22/14nm, EUV, and 3D (FinFET - NAND) Structures and its Impact on the Semiconductor Equipment Industry,
-Dr. Robert Castellano, The Information Network
Abstract: We are entering the most dynamic period I’ve witnessed in the 30 years of analyzing the semiconductor industry. Never before has the confluence of technological and financial challenges in semiconductor design, process technology and manufacturing threatened the continued progress of Moore’s Law. The emergence of multiple, non-planar transistor architectures, stacked 3D IC methodologies, 450mm wafer processing, and the continued uncertainty on high-volume EUV lithography have placed enormous burdens on R&D efficiency, effectiveness and synergy/dependency across the IC manufacturing and design supply chain. The implications of this convergence on the semiconductor equipment industry will be discussed, whit a particular emphasis on the Plasma Etch Markets
1:35-2:10 Wafer Based Temperature Metrology for Semiconductor Manufacturing Process and Equipments,
-Youxian Wen, Dinh Chu, Giampietro Bieli, SensArray-VLSI Division, KLA-Tencor
Abstract: The effect of wafer temperature to etch process has become more significant due to shrinkage and complexity of device technologies. To control and minimize the thermal effect, it is critical to understand how to determine thermal sensitivity of process, define process thermal budget as well as thermal stability and uniformity specification of the process and process tools. KLA-Tencor has developed wireless wafer based temperature metrology solution for the industry for many years. In this talk, both methodology and use cases of the wireless wafer based temperature metrology solution will be presented. Characterization of thermal stability and uniformity of process and process tools will be discussed.
2:10-2:35 The Recent Evolution of the Semion Ion Flux Measurement Technology,
-Mike B. Hopkins, PhD, CEO Impedans Ltd., Dublin Ireland
Abstract: Electrical Diagnostics in plasma involve the measurement of the current voltage IV, characteristic of the ion or electron current to a collector inside the Plasma and at the surface. The main techniques use either Langmuir Probes or Retarding Field Energy Analysers (RFEA) placed inside the plasma. The Langmuir is ideal to measure the spatial and time dependent plasma parameters of the volume of the plasma while RFEA’a are ideal at the walls and substrate holder to measure the particle energy and flux the surface. Industry would also like to know the angle of ions arriving at the surface and the species, including neutral fluxes. In our research we are working on RFEA’s that measures fast time resolution is pulsed DC and RF plasma, and we have developed technologies to measure ion flux as a function of ion angle, and ion mass as part of an on-going evolution of the Semion RFEA product range to meet industry needs. We will show initial mass and angle measurements on our RFEA system at the RF biased electrode.
2:35-3:00 A CCP-Plasma Source with Operation in the High-VHF to UHF Frequencies and Scalability to 450mm Substrates,
-A.R. Ellingboe, Plasma Research Laboratory, School of Physical Sciences and NCPST, Dublin City University, Ireland
Abstract: Semiconductor manufacturing is facing dramatic changes in terms of device structure and materials and the looming addition of 450mm substrates. To meet these many new plasma processes and the necessary supporting hardware must be developed. Historically, one of the "knobs" used to achieve some of the most challenging Dielectric-Etch steps was to increase the rf excitation frequency; The big-three plasma etch companies have all developed VHF plasma systems to help them meet these process requirements. The highest frequency that can be used is limited by process uniformity, which in turn is limited by plasma uniformity. Increasing substrate size to 450mm will require a drop in rf excitation frequency, and potential drop in process performance. In this presentation I will describe a multi-tile plasma source design which enables further increases in rf frequency up to at least 400MHz and simultaneously enables scalability to 450mm systems. Design concepts and experience in applying such systems to PECVD challenges will be presented and discussed. One such system has been used for large-area (600mm x 720mm) PECVD of Silicon with an excitation frequency of 162 MHz. In this system deposition rate and material properties across the tile-to-tile boundary is found to be constant. In addition, by operating in the high-VHF mode high crystallinity films (>60%) are achieved at 30% Silane flow and growth rates (>10A/s) demonstrating that high-freuqency plasma-chemistry is achieved in the system, as well as low induced rf-bias on the substrate at high power densities.
3:00 Close Meeting
All presentations will be requested to be posted on the PAG Proceedings webpage.