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- Proceedings
May, 2006
Effect of Species Density and Ion Scattering During Ashing on Ultra Low-k Inter-Level-Dielectric (ILD) Materials
M.A. Worsley, Stanford University
Study and Reduction of Plasma Damage of Porous Ultra Low-k Dielectrics during Photoresist Stripping
Songlin Xu, mattson
Surface Texturing of 193nm Photoresist under Ar
+
Bombardment: Effect of Ion Energy, Angle of Incidence and Substrate Temperature
D. Nest, University of California, Berkeley
The Transition from Saturated (c-C
4
F
8
) to Unsaturated (1,3-C
4
F
6
) Perfluorocarbons: Effects on Selectivity and ARDE in Via-hole Plasma Etch Applications
Teressa L. Anglinmatumona, AMD
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