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October 2008
Advanced Memory Technology
Recent Progress in Resistance Change Memory (1.9MB)
- Prof. Yoshio Nishi, Stanford University, Stanford, CA
Critical look at the role of oxygen vacancies in TiO2-based RRAM
- Prof. John Jameson, Center for Nanostructures, Santa Clara University
Physics and Materials Science of Memristive devices (1.5MB)
- Dr. Gilberto Medeiros-Ribeiro, Hewlett-Packard Labs, Hewlett-Packard, Palo Alto, CA
Resistive Switching Memory Technologies (1.3MB)
- Dr. An Chen, Strategic Technology Group, Advanced Micro Devices
Investigation of sputtered ferroelectric PZT thin films on Si substrates for probe storage
- Dr. Chun Wang, Seagate Technology, Prof Mark Kryder, Carnegie Mellon University
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