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TF Thin Film Users Group - Announcements

NCCAVS THIN FILMS USER GROUP (www.avsusergroups.org)

Topic: Advanced Memory

Sponsored by: Kurt J. Lesker Company

Symposium Date: April 21, 2016
Time: Sponsored Free Lunch 12:30-1:00 pm, Session begins at 1:00 pm

Location: SEMI Global Headquarters
Seminar Rooms 1 & 2, 3081 Zanker Road, San Jose, CA 95134
**Park in SEMI Global Parking Lots ONLY**

**Free Admission, Just Show Up!**
Co-Chairs:: Chakku Gopalan, Intel Corp., chakravarthy.gopalan@intel.com
Charita Perera, Applied Materials, Charitha_perera@amat.com
Paul Werbaneth, Intevac, Inc., pfwerbaneth@gmail.com
Michael Oye, UCSC, moye@ucsc.edu

AGENDA
12:30 pm: Meeting Start and Lunch

1PM-1:30 PM: Title-Abstract-TBD,
Pranav Kalavade, Non-Volatile Storage Group, Intel

1:30-2:00 PM: Emerging Memory: From Technology to Applications
Dave Eggleston, GLOBALFOUNDRIES
A once-in-a-generation shift in low power computing architecture is on the horizon, with the commercialization of new memory technologies. These emerging memories (MRAM, RRAM, PCRAM, 3D Xpoint) have been long awaited, because of their promise of an ideal combination of speed, endurance, persistence and energy efficiency. Finally, these emerging memories are beginning to emerge - as well as entirely new systems designs.
However, key questions for commercial success remain:
1. What markets and application requirements are best met by which emerging memory technology?
2. What technical and commercial barriers must emerging memory technology developers overcome to achieve widespread market adoption?
3. What fabrication processes must be mastered for emerging memory to be commercially viable?
4. Specifically for embedded MRAM (eMRAM), what are the driving customer requirements for the IoT, MCU, Automotive, Storage, and Compute markets? Why is eMRAM uniquely suited to address these requirements? What is the net benefit for applications?
5. How are process and integration engineers challenged to realize the capabilities of eMRAM? What are the problems, and some solutions?
6. What must be overcome for eMRAM-based NV ultra-low power logic to become a reality? What is the net benefit for applications?
The speaker will lead the audience through a detailed analysis of emerging embedded memories, and their application in systems. The speaker will specifically focus on the promise, versatility, and fabrication demands of eMRAM technology. Finally, the speaker will discuss how GLOBALFOUNDRIES is well positioned for SOC designers to capitalize on these future opportunities.

Bio: Dave Eggleston is the Vice President of Embedded Memory at GLOBALFOUNDRIES, which he joined in 2015. Dave has responsibility for the embedded volatile and non-volatile memory businesses at GLOBALFOUNDRIES, as well as the related strategic direction and initiatives. Dave is the former CEO and President of Unity Semiconductor, a RRAM industry pioneer acquired by Rambus. He has held technical executive management roles at Rambus, Micron (where he built and spearheaded the NAND systems engineering organization), SanDisk, and AMD. He holds 20+ patents in NAND flash and next-generation ReRAM memory, storage system usage, and high volume manufacturing. He currently serves on the Board of Directors of two NVM start-up companies. He received his MSEE from Santa Clara University and his BSEE from Duke University

2:15 to 2:45 PM: STT MRAM Technology and Productization
Jing Zhang, Ph.D., Avalanche Technology
As one of most promising emerging non-volatile (NVM) technologies, STT-MRAM has amassed tremendous interests from academia and industry alike due to non-volatility, low power, fast read/write speed, unlimited endurance, excellent retention, CMOS process compatibility and scalability, etc. Functional silicon has recently been successfully demonstrated for both stand-alone and embedded applications by industrial heavyweights as well as startups. While STT-MRAM technology is on the cusp of commercialization, critical technical and manufacturing challenges remain. In addition to continued advance in material research for intrinsic pMTJ performance improvement, advanced process development is increasingly pivotal for manufacturing yield improvement. This talk will review pMTJ and chip performance data with recently announced fully-functional 64Mb silicon and highlight selected key items in critical path for successful STT-MRAM productization.

Bio: Dr. Jing Zhang is currently Sr. Director of Product Development. He received Ph.D. in ECE from Carnegie Mellon University. Prior to Avalanche, he served as Sr. Manager with Hitachi GST (former IBM Storage Technology Division) for advanced HDD recording head design. He was also responsible for worldwide manufacturing test strategy and led efforts for overseas technology transfer / ramp-up. He held various technical and managerial positions with IBM, Read-Rite, and Seagate.

2:45-3:15 PM: CBRAM for IoT applications
Nathan Gonzales, Adesto Technologies
The Internet of Things (IoT) represents the next chapter of the semiconductor "revolution". For IoT "nodes" running off small batteries or energy-harvesting devices, power/energy limitations place a premium on efficiency for all components of a system. With a low write voltage requirement, fast write capabilities, and bit alterability, CBRAM enables designing memory solutions with these power and energy limitations. Here, we review recent advances in conductive-bridge memory (CBRAM), and show how its performance and power/energy characteristics make it an ideal match for such applications.

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All presentations will be requested to be posted on the TFUG Proceedings webpage.

If you would like to sponsor this meeting or list a banner ad on the User Group website, please check out our “NCCAVS Marketing/Sponsorship” opportunities at: http://www.avsusergroups.org/misc_pdfs/NCCAVS_marketing_opportunities.pdf

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