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July 2007
USJ Formation and Metrology for sub-45nm Technologies
Device Variability and USJ Implant & Anneal Options Limited by Strain-Si and High-k Gate Process Integration (7.3MB pdf)
- John Borland, J.O.B. Technologies
Advantages of Ion Cluster Implantation in CMOS Fabrication (3.8MB pdf)
- Tom Horsky, SemEquip
Flash Annealing For USJ Activation (968k pdf)
- Jeff Gelpey, Mattson Technology Canada
PULSION - The Ion Implant Solution for sub 45nm (1.9MB pdf)
- Laurent Roux, IBS
Applications of Flash Lamp Annealing (994k pdf)
- Hiroki Kiyama, Dai Nippon Screen
Performance of Laser Annealed Junctions in Advanced CMOS Devices (967k pdf)
- Susan Felch, Applied Materials
Advanced Implant and Junction Metrology For 45nm And Beyond (3.9MB pdf)
- Pierre Mitchell, KLA-Tencor
Photoluminescence metrology for global wafer and micro implant and anneal uniformity detection (5.6MB pdf)
- Chris Raymond, Nanometrics
High Resolution Mapping of Sheet Resistance of Ultra Shallow Implants Can Reveal Implanter or Anneal (1.3MB pdf)
- Charlie Kohn, Semilab
All proceedings are in PDF format. You must have Adobe Acrobat Reader to view these papers. If you do not have Acrobat Reader, you can download it free from Adobe.
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