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July 2008
Topic: SJ Formation for 32nm Node
Modeling of temperature, stress, defects and dopant activation in Si, SiGe and SiC during spike and msec annealing for 32nm node (4.1MB pdf)
- Ignacio Martin-Bragado, Synopsys
32nm node shallow junction problems and solutions (8.5MB pdf)
- Sue Felch, Spansion
fRTP update for 32nm node (700K pdf)
- Paul Timans, Mattson
FLA update for 32nm node (590K pdf)
- Hiroki Kiyama, DNS
LSA update for 32nm node (732K pdf)
- Jeff Hebb, Ultratech
Single wafer implantation process matching issues (1.4MB pdf)
- Mark Harris, Axcelis
Cluster Implant for 32nm (1.2MB pdf)
- Wade Krull, SemEquip
Plasma doping
- Bunji Mizuno, UJT
Infusion doping for 32nm node (1.2MB pdf)
- Nathan Baxter, TEL-Epion
32nm node USJ formation using Rapid Process Optimization Metrology (13.7MB ppt)
- John Borland, JOB Technologies
TW metrology for implant and annealing at 32nm node
- Salnik, KLA-Tencor
All proceedings are in PDF format. You must have Adobe Acrobat Reader to view these papers. If you do not have Acrobat Reader, you can download it free from Adobe.
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